{"id":67037,"date":"1970-01-01T00:00:00","date_gmt":"1970-01-01T00:00:00","guid":{"rendered":"https:\/\/essays.homeworkacetutors.com\/1970\/01\/improving-performance-of-dye-sensitized-solar-cells-dssc\/"},"modified":"1970-01-01T00:00:00","modified_gmt":"1970-01-01T00:00:00","slug":"improving-performance-of-dye-sensitized-solar-cells-dssc","status":"publish","type":"post","link":"https:\/\/www.colapapers.com\/us\/improving-performance-of-dye-sensitized-solar-cells-dssc\/","title":{"rendered":"Improving Performance of Dye-Sensitized Solar Cells (DSSC)"},"content":{"rendered":"<div class=\"content position-relative mb-4\">\n<p><strong>Suppression of recombination channels of Dye-sensitized solar cells made of SnO<\/strong><strong><sub>2<\/sub><\/strong> <strong>using core shell structure of SiO<\/strong><strong><sub>2<\/sub><\/strong> <strong>extracted from rice husk<\/strong><\/p>\n<ul>\n<li><strong>N. F. Ajward, D.L.N. Jayathilaka, J.C.N. Rajendr<ins>a<\/ins> and V.P.S.Perera<\/strong><\/li>\n<\/ul>\n<p><strong>Introduction<\/strong><\/p>\n<p>Dye sensitized solar cells (DSC) are one of the most promising types of solar cells for next generation of solar cell technology that has power conversion efficiency as high as 12% (Nazeeruddin et al., 2011). Compared with conventional silicon photovoltaics, DSSCs offer the cost savings in the materials and a range of solution deposition methods for device manufacture. However, there are still many challenges to be met before DSCs can truly compete with current silicon solar cell technology. Device efficiency, stability and lifetimes and scalable methods for device fabrication are the key issues in this field of research. A lot of work has been done to improve efficiency of DSSCs taking different avenues, which includes increasing the surface area of the metal oxide, developing new dyes with broad absorption spectra, suppressing the recombination channels and introducing light-scattering materials in the film.<\/p>\n<p>Utilization of mesoporous film made of nano particles of titania for DSSC is the imperative innovation made by Gratzel and co-workers in 1991 to achieve high efficiencies (Regan B O and Gratzel M., 1991). After that it was realized the possibility to achieving high efficiencies even with other high band gap semiconductors such as SnO<sub>2<\/sub> and ZnO made in nano range (Bergeron et al., 205, Keis et al., 2002). However DSSCs of high efficiencies comparable to that made of TiO<sub>2<\/sub> films has been achieved with other high band gap semiconductor films made in the form of composites (Niinobe et al., 2005]. The improvement is principally accepted as the suppression of recombination of germinated charge carriers due to passivation of trap states and charge carrier confinement.<\/p>\n<p>Materials such as Al<sub>2<\/sub>O<sub>3<\/sub>, MgO, and ZrO<sub>2<\/sub> have been used previously as barrier layers in DSSCs, but no record available for the use of SiO<sub>2<\/sub> for the same purpose (<a href=\"http:\/\/pubs.acs.org\/action\/doSearch?action=search&amp;author=Kay%2C+A&amp;qsSearchArea=author\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Kay<\/a> and <a href=\"http:\/\/pubs.acs.org\/action\/doSearch?action=search&amp;author=Gr%C3%A4tzel%2C+M&amp;qsSearchArea=author\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Gr\u00e4tzel<\/a>, 2002). But SiO<sub>2<\/sub> particles have been used to scatter light in TiO<sub>2<\/sub> films of DSScs.<\/p>\n<p>In this research work we improved the performance of DSSCs by introducing thin barrier layer of SiO<sub>2<\/sub> surrounding the SnO<sub>2<\/sub> crystallite to prevent recombination of charge carriers in the diffusion assisted transportation. Here the thin barrier of insulating material enhance the lifetime of germinated charge carriers of DSSC so as to improve the efficiency.<\/p>\n<p><strong>Methodology<\/strong><\/p>\n<p>Rice <del>h<\/del><ins>H<\/ins>usk<del>s<\/del> (RH) of BG 300 rice variety was collected and initially washed with tap water to remove soils and dirt. It was further washed with distilled water and dried at 120 \u00cb\u0161C. The dried RH <del>will be<\/del><ins>was<\/ins> fully burnt <ins>to white ash<\/ins> at around 700\u00cb\u0161C in a muffle furnace and the <ins>R<\/ins><del>r<\/del>ice <del>husk<\/del> <ins>H<\/ins><ins>usk<\/ins> <del>ash<\/del> <ins>A<\/ins><ins>sh<\/ins> (RHA) was collected<ins>.<\/ins> <del>which is white in colour<\/del><del>.<\/del><\/p>\n<p><strong><em>Extraction of Silica<\/em><\/strong><\/p>\n<p>Aforementioned dried RHA was refluxed with 2M HCl and thoroughly washed with distilled water and dried. 10 g of the sample was stirred in 80 ml of 2.5 N sodium hydroxide solution. It was then boiled in a covered 250 ml Erlenmeyer flask for 3 hours and the solution was filtered using a Whatman No. 41 filter paper. Filtrate was allowed to cool down to room temperature and added 5<del> <\/del>N H<sub>2<\/sub>SO<sub>4<\/sub> until it reaches pH 2. Then NH<sub>4<\/sub>OH was added to the suspension until it reaches pH 8.5 and allowed to be at room temperature for 3.5 hours. The precipitated SiO<sub>2<\/sub> was separated by filtration and thoroughly washed with distilled water. The silica obtained was oven dried at 120 <sup>0<\/sup>C for 12 hours and cool down to room temperature.<\/p>\n<p><strong><em>Preparation of SnO<\/em><\/strong><strong><em><sub>2<\/sub><\/em><\/strong> <strong><em>Particles<\/em><\/strong><\/p>\n<p>Tin (<del>iv<\/del><ins>IV<\/ins>) chloride was dissolved in distilled water to obtain 0.5<del> <\/del>M solution and ammonia was added stirring the solution to obtain fine particles of SnO<sub>2<\/sub>. The SnO<sub>2<\/sub> particles are thoroughly washed with distilled water to remove chlorine ions. Then the particles are suspended in diluted ammonium solution for stabilization.<\/p>\n<p><strong><em>Preparation of SnO<\/em><\/strong><strong><em><sub>2<\/sub><\/em><\/strong> <strong><em>and SiO<\/em><\/strong><strong><em><sub>2<\/sub><\/em><\/strong> <strong><em>core shell structures<\/em><\/strong><\/p>\n<p>Tin (IV) Oxide particles were coated with ultra thin layer of silica by the following method. 0.5g of SnO<sub>2<\/sub> particles were weighted and grinded in an agate mortar with 2 ml of ethanol. Then measured volumes of 0.5M sodium silicate which was prepared by dissolving extracted silica in NaOH was added at a time to different SnO<sub>2<\/sub> samples that has been prepared as described above. After that 1 ml of acetic acid was added drop wise to that mixture. Sodium silicate around the SnO<sub>2<\/sub> particles suppose to turn into SiO<sub>2<\/sub> in the process of acidification.<\/p>\n<p><strong><em>Fabrication of DSSC with SiO<\/em><\/strong><strong><em><sub>2<\/sub><\/em><\/strong><strong><em>\/SiO<\/em><\/strong><strong><em><sub>2<\/sub><\/em><\/strong> <strong><em>composite<\/em><\/strong><\/p>\n<p>The paste as prepared was used to coat films on <ins>C<\/ins><del>c<\/del>onducting <ins>T<\/ins><del>t<\/del>in <ins>O<\/ins><del>o<\/del>xide (CTO) glass plates by the doctor blade method that cut into the size of 1.5 x 1 cm<sup>2<\/sup>. Prior to coating the films on the CTO glass, they were thoroughly cleaned by detergent, distilled water and acetone with ultrasonic agitation. CTO plates coated with SnO<sub>2<\/sub>\/SiO<sub>2<\/sub> films were dried on a hot plate heated up to 120 \u00ef\u201a\u00b0C for 5 minutes. Then the films were sintered at 450 \u00ef\u201a\u00b0C in a furnace for 30 minutes. When the films cooled down to the room temperature they were immersed in Ru-bipyridyl N-719 dye solution (0.5<del> <\/del>mM in ethanol) for 12 h. After the dye adsorption, films were rinsed with ethanol and sandwich with platinum sputtered conducting glass substrates using clips. The capillary space in between the two plates of cells were filled with electrolyte containing 0.5M potasium iodide, 0.05M iodine in a mixture of acetonitrile and ethylene carbonate 1:4 by volume.<\/p>\n<p><strong><em>Characterization Techniques<\/em><\/strong><\/p>\n<p>I-V characteristics of the cells were measured under the illumination of 100 mWcm<sup>\u2212<\/sup><sup>2<\/sup> simulated light source and computer controlled setup consisting of potentiostat\/galvanostat. Elemental analysis of RHA was done using Atomic Absorption Spectroscopy. X-ray diffraction (XRD) patterns and SEM images were also obtained for SnO<sub>2<\/sub>\/SiO<sub>2<\/sub> composite films.<\/p>\n<p><strong>Results and discussion<\/strong><\/p>\n<p>According to the literature reports, silica extracted from RH is in naorange with least impurity levels. Elements that present as impurities in RHA of BG 300 rice variety were analyzed with atomic absorption spectroscopy. Percentages of impurities in RHA after burning and refluxing with HCl are given in table 1.<\/p>\n<p><strong>Table 1:<\/strong> Percentages of impurities in RHA after burning and after refluxing in HCl.<\/p>\n<table class=\"table table-bordered\">\n<tbody>\n<tr>\n<td>\n<p><strong>Impurities<\/strong><\/p>\n<\/td>\n<td>\n<p><strong>% in RHA after burning<\/strong><\/p>\n<\/td>\n<td>\n<p><strong>% in RHA after reflux with HCl<\/strong><\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Calcium<\/p>\n<\/td>\n<td>\n<p>0.926<\/p>\n<\/td>\n<td>\n<p>0.402<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Magnesium<\/p>\n<\/td>\n<td>\n<p>0.537<\/p>\n<\/td>\n<td>\n<p>0.198<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Manganese<\/p>\n<\/td>\n<td>\n<p>Not detected<\/p>\n<\/td>\n<td>\n<p>Not detected<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Ferrous<\/p>\n<\/td>\n<td>\n<p>0.269<\/p>\n<\/td>\n<td>\n<p>0.060<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<p>It is inferred from these results that the impurity level of RHA is low and can be reduced further by refluxing with HCl. That is because these impurities present in the RHA as oxides can be removed easily by acid wash.<\/p>\n<p><img decoding=\"async\" alt=\"\" src=\"https:\/\/s3-eu-west-1.amazonaws.com\/aaimagestore\/essays\/1953852.004.png\"\/><img decoding=\"async\" alt=\"\" src=\"https:\/\/s3-eu-west-1.amazonaws.com\/aaimagestore\/essays\/1953852.003.png\"\/><img decoding=\"async\" alt=\"\" src=\"https:\/\/s3-eu-west-1.amazonaws.com\/aaimagestore\/essays\/1953852.002.png\"\/><img decoding=\"async\" alt=\"\" src=\"https:\/\/s3-eu-west-1.amazonaws.com\/aaimagestore\/essays\/1953852.001.png\"\/><img decoding=\"async\" alt=\"\" src=\"https:\/\/s3-eu-west-1.amazonaws.com\/aaimagestore\/essays\/1953852.005.png\"\/> In this study we have investigated the possibility of using SiO<sub>2<\/sub> thin barrier around the SnO<sub>2<\/sub> particles to impede leakage of electrons for recombination processes which is one approach to increase the efficiency of DSSCs. Figure 1(a) shows the measured open-circuit photo-voltage (Voc) and short-circuit photocurrent (Isc) of DSSCs with different SiO<sub>2<\/sub>% by weight in the SnO<sub>2<\/sub>\/SiO<sub>2<\/sub> films.<\/p>\n<p><strong>Figure 1:<\/strong> (a) Open-circuit photovoltage (V<sub>oc<\/sub>) and short-circuit photocurrent (I<sub>sc<\/sub>) of DSSCs with different SiO<sub>2<\/sub> % in SnO<sub>2<\/sub> films (b) Suppression of recombination of injected electrons in the conduction band of SnO<sub>2<\/sub> by SiO<sub>2<\/sub> shell.<\/p>\n<p>Initial increment of SiO<sub>2<\/sub> % in the film gradually covers the SnO<sub>2<\/sub> particles as an ultra thin layer and beyond certain limit of SiO<sub>2<\/sub> contributes to the growth of the SiO<sub>2<\/sub> layer around the SnO<sub>2<\/sub> particles increasing the thickness. This is the reason why both the Isc as well as the Voc increase initially with the increment of SiO<sub>2<\/sub> % in the SnO<sub>2<\/sub> films of DSSCs. The increment of Isc and Voc is attributed to the suppression of recombination of injected electrons by the photo excitation of the dye in the conduction band of SnO<sub>2<\/sub> due to the development of ultra thin layer of SiO<sub>2<\/sub> around SnO<sub>2<\/sub> particles (Figure 1b). The highest photocurrent of DSSCs with the addition of 2.5 % of SiO<sub>2<\/sub> may have been achieved due to the perfect coverage of SnO<sub>2<\/sub> particles with ultra thin layer of SiO<sub>2<\/sub>. But Voc continues to increase further up to 4% of SiO<sub>2<\/sub> in SnO<sub>2<\/sub> films. It is noticeable that the decrement of Voc afterward is not significant as in Isc after reaching the maximum. Anyway further increment of the thickness of the ultra thin layer of SiO<sub>2<\/sub> happens to decrease both Isc and Voc.<\/p>\n<p><img decoding=\"async\" alt=\"\" src=\"https:\/\/s3-eu-west-1.amazonaws.com\/aaimagestore\/essays\/1953852.007.png\"\/><img decoding=\"async\" alt=\"\" src=\"https:\/\/s3-eu-west-1.amazonaws.com\/aaimagestore\/essays\/1953852.006.png\"\/><a href=\"https:\/\/www.google.lk\/url?sa=i&amp;rct=j&amp;q=&amp;esrc=s&amp;source=images&amp;cd=&amp;cad=rja&amp;uact=8&amp;docid=b8A-PpLihyhFNM&amp;tbnid=Ek7jNWdo_05oXM:&amp;ved=0CAUQjRw&amp;url=http:\/\/pubs.rsc.org\/en\/content\/articlehtml\/2011\/an\/c0an00584c&amp;ei=mDiFU-7YPMno8AXV8IK4BA&amp;psig=AFQjCNGfudikUa4HIFkSzAcRNmvxkVw8eQ&amp;ust=1401326005143664\" rel=\"nofollow noopener noreferrer\" target=\"_blank\"><img decoding=\"async\" alt=\"http:\/\/www.rsc.org\/ej\/AN\/2011\/c0an00584c\/c0an00584c-f7.gif\" src=\"https:\/\/s3-eu-west-1.amazonaws.com\/aaimagestore\/essays\/1953852.008.png\"\/><\/a><img decoding=\"async\" alt=\"\" src=\"https:\/\/s3-eu-west-1.amazonaws.com\/aaimagestore\/essays\/1953852.009.png\"\/> The amount of dye adsorbed on the semiconductor film is also a detrimental factor on the performance of DSSCs. We have noticed that the dye absorbed on SnO<sub>2<\/sub> films decreased with the increment of SiO<sub>2<\/sub>%. To quantitatively analyze it, we have desorbed the dye adsorbed on SnO<sub>2<\/sub> films with different SiO<sub>2<\/sub> %. This was done by allowing the films to adsorb dye for determined period and completely desorbing the dye by immersing the dye adsorbed SnO<sub>2<\/sub> films in known volume of 0.5<del> <\/del>M KOH solution. The concentration of the dye in the KOH solution was estimated spectroscopically at the wave length of 550 nm. Figure 2 given bellow shows the deviation of dye adsorbed on SnO<sub>2<\/sub> films for different SiO<sub>2<\/sub> %.<\/p>\n<p><strong>Figure: 2<\/strong> (a) Variation of dye adsorbed on SnO<sub>2<\/sub> films for different SiO<sub>2<\/sub> % and (b) structure of the N-719 dye.<\/p>\n<p>It is evident from the Figure 2 that the dye adsorption on SnO<sub>2<\/sub> films decrease with the increment of SiO<sub>2<\/sub> %. This may affect adversely on photocurrent of DSSCs. Although dye aggregations on semiconductor films also results to decrease photocurrent there should be sufficient amount of dye adsorbed on SnO<sub>2<\/sub> crystallites for efficient operation of DSSCs. The decrement of Isc at higher SiO<sub>2<\/sub> percentages is main consequence of low dye adsorption on SnO<sub>2<\/sub> films. The adsorption of dye on SnO<sub>2<\/sub> films decrease with the increment of SiO<sub>2<\/sub> % because of the acidity of SiO<sub>2<\/sub> which prevent chelation of N-719 dye on SnO<sub>2<\/sub> films by the carboxylic groups.<\/p>\n<p>XRD and SEM analysis was also carried out to characterize the SiO<sub>2<\/sub> ultra thin layer coated on SnO<sub>2<\/sub> particles. Figure 3 shows the SEM of SnO<sub>2<\/sub> film with 4.5% of SiO<sub>2<\/sub>. The resolution of the SEM images was not sufficient to identify the SiO<sub>2<\/sub> thin layer. But it can be seen that the SnO<sub>2<\/sub> particles are distributed in wide range of particle sizes which also affect adversely on the performance of DSSCs.<\/p>\n<p><img decoding=\"async\" alt=\"C:Documents and SettingsJob 6432DesktopSEM10kx[1] 6%.JPG\" src=\"https:\/\/s3-eu-west-1.amazonaws.com\/aaimagestore\/essays\/1953852.010.jpg\"\/> The XRD pattern of the SnO<sub>2<\/sub> film with 4.5 % of SiO<sub>2<\/sub> is given in Figure 3(b). There was no any peaks appeared for SiO<sub>2<\/sub> in the XRD pattern of the SnO<sub>2<\/sub> films as well. The insertion in the Figure 3(b) is the XRD obtain for SiO<sub>2<\/sub> powder obtained by acidification of Na<sub>2<\/sub>SiO<sub>3<\/sub> with acetic acid and sintering at 450 \u00b0C for 30 minutes. It is found to be in amorphous form and most probably the SiO<sub>2<\/sub> around the SnO<sub>2<\/sub> is also amorphous. Because of the amorphous nature of SiO<sub>2<\/sub> and low percentage might produce significant peaks for SiO<sub>2<\/sub> in the XRD pattern.<\/p>\n<p><img decoding=\"async\" alt=\"\" src=\"https:\/\/s3-eu-west-1.amazonaws.com\/aaimagestore\/essays\/1953852.012.png\"\/><img decoding=\"async\" alt=\"\" src=\"https:\/\/s3-eu-west-1.amazonaws.com\/aaimagestore\/essays\/1953852.011.png\"\/><\/p>\n<p><img decoding=\"async\" alt=\"\" src=\"https:\/\/s3-eu-west-1.amazonaws.com\/aaimagestore\/essays\/1953852.013.png\"\/> <img decoding=\"async\" alt=\"\" src=\"https:\/\/s3-eu-west-1.amazonaws.com\/aaimagestore\/essays\/1953852.014.png\"\/><strong>Figure 3<\/strong> (a) SEM image of SnO<sub>2<\/sub> film with 4.5% of SiO<sub>2<\/sub> (b) XRD pattern of the SnO<sub>2<\/sub> film with 4.5 % of SiO<sub>2<\/sub>. Insertion is the XRD obtain only for SiO<sub>2<\/sub> powder.<\/p>\n<p>Conclusions<\/p>\n<p>The silica extracted from rice husk is with low impurity levels suitable for coating ultra thin layers of SiO<sub>2<\/sub> arround SnO<sub>2<\/sub> to fabricate DSSCs. Deposition of ultra thin layer of SiO<sub>2<\/sub> on SnO<sub>2<\/sub> particles improved the performance of DSSCs. The reason for decrement of cell performance with higher percentages of SiO<sub>2<\/sub> is not only due to the barrier thickness, but also due to the low dye adsorption. It was observed by the SEM images that the particle size of SnO<sub>2<\/sub> is widely diverse because of particle aggregation. It is recommended to use uniform size of SnO<sub>2<\/sub> particles for better performance of DSSCs. some chemical treatment also required to enhance the adsorption of dye on SiO<sub>2<\/sub> ultra thin layer on SnO<sub>2<\/sub> particles.<\/p>\n<p><strong>References<\/strong><\/p>\n<p>1. <a href=\"http:\/\/pubs.acs.org\/action\/doSearch?action=search&amp;author=Bergeron%2C+B+V&amp;qsSearchArea=author\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Bergeron<\/a> B.V. , <a href=\"http:\/\/pubs.acs.org\/action\/doSearch?action=search&amp;author=Marton%2C+A&amp;qsSearchArea=author\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Marton<\/a> A., <a href=\"http:\/\/pubs.acs.org\/action\/doSearch?action=search&amp;author=Oskam%2C+G&amp;qsSearchArea=author\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Gerko Oskam<\/a> G., and <a href=\"http:\/\/pubs.acs.org\/action\/doSearch?action=search&amp;author=Meyer%2C+G+J&amp;qsSearchArea=author\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Meyer<\/a> G.J.; (2005) Dye-Sensitized SnO<sub>2<\/sub> Electrodes with Iodide and Pseudohalide Redox Mediators; J. Phys. Chem. B, , 109 (2), 937\u2013943.<\/p>\n<p>2. <a href=\"http:\/\/pubs.acs.org\/action\/doSearch?action=search&amp;author=Kay%2C+A&amp;qsSearchArea=author\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Kay<\/a> A. and <a href=\"http:\/\/pubs.acs.org\/action\/doSearch?action=search&amp;author=Gr%C3%A4tzel%2C+M&amp;qsSearchArea=author\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Gr\u00e4tzel<\/a> M.; (2002) Dye-Sensitized Core\u2212Shell Nanocrystals:\u00e2\u20ac\u2030 Improved Efficiency of Mesoporous Tin Oxide Electrodes Coated with a Thin Layer of an Insulating Oxide; Chem. Mater., 14 (7), 2930\u20132935.<\/p>\n<p>3. <a href=\"https:\/\/www.sciencedirect.com\/science\/article\/pii\/S1010603002000394\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Keis<\/a> K., <a href=\"https:\/\/www.sciencedirect.com\/science\/article\/pii\/S1010603002000394\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Bauer<\/a> C., <a href=\"https:\/\/www.sciencedirect.com\/science\/article\/pii\/S1010603002000394\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Boschloo<\/a> G., <a href=\"https:\/\/www.sciencedirect.com\/science\/article\/pii\/S1010603002000394\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Hagfeldt<\/a> A., <a href=\"https:\/\/www.sciencedirect.com\/science\/article\/pii\/S1010603002000394\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Westermark<\/a> K., <a href=\"https:\/\/www.sciencedirect.com\/science\/article\/pii\/S1010603002000394\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Rensmo<\/a> H., <a href=\"https:\/\/www.sciencedirect.com\/science\/article\/pii\/S1010603002000394\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Siegbahn<\/a> H.; (2002) Nanostructured ZnO electrodes for dye-sensitized solar cell applications; <a href=\"https:\/\/www.sciencedirect.com\/science\/journal\/10106030\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Journal of Photochemistry and Photobiology A: Chemistry<\/a>, <a href=\"https:\/\/www.sciencedirect.com\/science\/journal\/10106030\/148\/1\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">148, issue 1\u20133<\/a>, 57\u201364.<\/p>\n<p>4. Nazeeruddin M. K., Baranoff E, Gratzel M., (2011) Dye-sensitized solar cells: A brief overview; Solar Energy 85 1172\u20131178.<\/p>\n<p>5. <a href=\"http:\/\/pubs.acs.org\/action\/doSearch?action=search&amp;author=Niinobe%2C+D&amp;qsSearchArea=author\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Niinobe<\/a> D. , <a href=\"http:\/\/pubs.acs.org\/action\/doSearch?action=search&amp;author=Makari%2C+Y&amp;qsSearchArea=author\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Makari<\/a> Y., <a href=\"http:\/\/pubs.acs.org\/action\/doSearch?action=search&amp;author=Kitamura%2C+T&amp;qsSearchArea=author\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Kitamura<\/a> T., <a href=\"http:\/\/pubs.acs.org\/action\/doSearch?action=search&amp;author=Wada%2C+Y&amp;qsSearchArea=author\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Wada<\/a> Y., and <a href=\"http:\/\/pubs.acs.org\/action\/doSearch?action=search&amp;author=Yanagida%2C+S&amp;qsSearchArea=author\" rel=\"nofollow noopener noreferrer\" target=\"_blank\">Yanagida<\/a>; S.; (2005) Origin of Enhancement in Open-Circuit Voltage by Adding ZnO to Nanocrystalline SnO<sub>2<\/sub> in Dye-Sensitized Solar Cells; J. Phys. Chem. B, , 109 (38), 17892\u201317900.<\/p>\n<p>6. Regan B O and Gratzel M; (1991) A low cost high efficient solar cell based on dye sensitized colloidal TiO2 films; <em>Nature<\/em> 353 737.<\/p>\n<\/div>\n","protected":false},"excerpt":{"rendered":"<p>Suppression of recombination channels of Dye-sensitized solar cells made of SnO2 using core shell structure of SiO2 extracted from rice husk N. F. Ajward, D.L.N. Jayathilaka, J.C.N. Rajendra and V.P.S.Perera Introduction Dye sensitized solar cells (DSC) are one of the most promising types of solar cells for next generation of solar cell technology that has [&hellip;]<\/p>\n","protected":false},"author":7,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[9442,5792],"tags":[3755,7785,7784,7783],"class_list":["post-67037","post","type-post","status-publish","format-standard","hentry","category-in-a-page-paper-write-physics","category-physics","tag-buy-essay-usa","tag-custom-dissertation-writing-services-for-phd-students","tag-uk-cheap-essay-writing-service","tag-write-my-essay-fast-plagiarism-free-ai-writing-tool"],"_links":{"self":[{"href":"https:\/\/www.colapapers.com\/us\/wp-json\/wp\/v2\/posts\/67037","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.colapapers.com\/us\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.colapapers.com\/us\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.colapapers.com\/us\/wp-json\/wp\/v2\/users\/7"}],"replies":[{"embeddable":true,"href":"https:\/\/www.colapapers.com\/us\/wp-json\/wp\/v2\/comments?post=67037"}],"version-history":[{"count":0,"href":"https:\/\/www.colapapers.com\/us\/wp-json\/wp\/v2\/posts\/67037\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.colapapers.com\/us\/wp-json\/wp\/v2\/media?parent=67037"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.colapapers.com\/us\/wp-json\/wp\/v2\/categories?post=67037"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.colapapers.com\/us\/wp-json\/wp\/v2\/tags?post=67037"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}